TECHNICAL SPECIFICATIONS
APPLICATIONS
Features : Pure chemical etching, Remote plasma microwave source 1kW, Process temperature 20 to 70°C, Only very slight attack to Si and Si compound
Gas : O2, N2 and CF4
Mask : No attack to metals (Ni, au, Cu…)
Materials: Mainly resist Remover
Wafers: Substrate size up to 200mm
Access: All trained users