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AVAILABLE
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TECHNICAL SPECIFICATIONS

APPLICATIONS

Features : Pure chemical etching, Remote plasma microwave source 1kW, Process temperature 20 to 70°C, Only very slight attack to Si and Si compound

  • Thick photoresist remover (SU8)
  • Descum
  • Surface activation

Gas : O2, N2 and CF4

Mask : No attack to metals (Ni, au, Cu…)

Materials: Mainly resist Remover

Wafers: Substrate size up to 200mm

Access: All trained users

 
Tool name:
MUEGGE Plasma O2
Area/room:
SB2 - Gravure
Category:
Plasma etching
Manufacturer:
MUEGGE
Model:
MUEGGE R3T
Max booking time, day:
hours
Max booking time, night:
hours
No. of future bookings:

Instructors

Licensed Users

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