TECHNICAL SPECIFICATIONS :
Gas : HF, EtOH, N2
Recommended masking materials : alumina, aluminum, silicon carbide, or silicon
No resists or polymers and no Kapton tape are allowed in the chamber as these will contaminate the chamber with polymer
Wafer size : up to 6 inch
Hydrofluoric Acid Etcher is used primarily for isotropic etching of all types of SiO2 and offers a safer alternative to liquid-HF processes. Furthermore, the dry-HF process eliminates the stiction problems often encountered in releasing SOI-MEMS devices.