TECHNICAL SPECIFICATIONS :

Gas : HF, EtOH, N2

Recommended masking materials :  alumina, aluminum, silicon carbide, or silicon

No resists or polymers and no Kapton tape are allowed in the chamber as these will contaminate the chamber with polymer

Wafer size  : up to 6 inch

APPLICATIONS :

Hydrofluoric Acid Etcher is used primarily for isotropic etching of all types of SiO2 and offers a safer alternative to liquid-HF processes. Furthermore, the dry-HF process eliminates the stiction problems often encountered in releasing SOI-MEMS devices.

This tool was co-financed by the European Union with the European Regional Development Funding (FEDER) as part of the Next-Watch project