Technical specifications:

• ICP Source : 1000W
• Bias power : 600W
• Clamping chuck: Mechanic
• Gas: BCl3, Cl2, C2H4, SF6, CHF3, O2, N2, Ar
• Mask: PR, SiO2, Metallic masks are allowed
• Quartz shuttles (compatible 75, 100, 150 mm wafers) and specific holders for samples 30*30mm
• Quartz Liner for protection of reactor from non-volatile byproducts
• Metallic Liner for protection when etching contaminant materials like Cupper

• WAFERS : 3,4 & 6 inch wafers, samples can be glued on 3’’ or 4” carrier wafer

• End point detection : Interferometry HORIBA Jobin-Yvon, LEM G50

APPLICATIONS:

• Nano-metric & submicronic etching on variety of materials:

• Metals: Al, Cr, Ni, Ti…
• III-V materials: GaAs…