Picture of FIB FEI
Current status:
AVAILABLE
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2nd Responsible:
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  • Application Field

  • Ion beam lithography
  • Cross section and 3D reconstruction
  • SEM observation

 

  • Technical Characteristics

Elstar UHR immersion lens FESEM column

  • Electrostatic scanning
  • Constant power lens technology
  • Fast beam blanker (5 MHz)
  • Landing voltage 50 V – 30 kV
  • Probe current up to 22 nA

Electron beam resolution @ optimum WD

  • 0.9 nm @ 15 kV
  • 1.4 nm @ 1kV

Tomahawk ion column

  • Up to 60 A.cm² beam current density
  • 15 apertures (1 pA – 65 nA)
  • Landing voltage 500 V – 30 kV

Ion beam resolution @ coincident point

  • 4.5 nm @ 30 kV

High precision 5-axes motorized stage

  • XY : 150 mm x 150 mm, piezo driven
  • Z : 10 mm
  • T : -10° to +60°
  • R : 360° endless, piezo driven
  • Tilt accuracy (between 50 and 54°) 0.1°

Detectors

  • Elstar in-lens SE detector  (TLD-SE)
  • Elstar in-lens BSE detector (TLD-BSE)
  • Everhart-Thornley SE detector (ETD)
  • High contrast BSE detector (DBS)
  • SE and SI detector (ICE)
  • IR Camera / NavCam

Gas Injection System

  • Platinum deposition
  • Insulator deposition (SiOx)
  • Enhanced etch (iodine)
  • Insulator enhanced etch (XeF2)

Others

  • 3D reconstruction (slice & view)
  • Flood Gun

Raith Elphy Multibeam

  • GDSII editor
  • 50 ns min. dwell time
  • Drift correction
  • Overlay and stitching possible, accuracy function of used beam and field size
Tool name:
FIB FEI
Area/room:
Salle FIB
Category:
Nanotechnology
Manufacturer:
FEI
Model:
Helios Nanolab 600i

Instructors

Licensed Users

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