Picture of Station E-Beam
Current status:
AVAILABLE
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  • Application Field

  • Electronic lithography

 

  • Technical Characteristics

  • Filament                                             Schottky TFE
  • High voltage                                      50kV
  • Current                                               100pA – 20nA
  • Samples                                            chips to 6'' wafer
  • Field size                                            500um
  • Min linewidth                                     10nm
  • Stitching accuracy                             30nm
  • Overlay accuracy                               25nm
Tool name:
Station E-Beam
Area/room:
SB1 - Salle E-Beam
Category:
Nanotechnology
Manufacturer:
Raith
Model:
Voyager
Max booking time, day:
hours
Max booking time, night:
hours
No. of future bookings:

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