Picture of Station E-Beam
Current status:
AVAILABLE
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Responsibles
1st Responsible:
Roland SALUT
2nd Responsible:
Marina RASCHETTI
Files
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Description

  • Application Field

  • Electronic lithography

 

  • Technical Characteristics

  • Filament                                            Schottky TFE
  • High voltage                                      50kV
  • Current                                             100pA – 40nA
  • Samples                                            chips to 6'' wafer
  • Field size                                           500um
  • Min linewidth                                     10nm
  • Stitching accuracy                            30nm
  • Overlay accuracy                              25nm
Details
Tool name:
Station E-Beam
Area/room:
SB1 - Salle E-Beam
Category:
Nanotechnology
Manufacturer:
Raith
Model:
Voyager
Instructors & Licensed Users

Instructors

Licensed Users

Tool Modes
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