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TECHNICAL SPECIFICATIONS

APPLICATIONS

SOLUTIONS

BHF

HF 48%

SiO2 and Ti etching, Vapor HF Etching

 

 

ETCH SPEED

SiO2 by BHF: 57nm/min at 20°C

BF33 by HF 48%:  4.2µm/min

BF33 by vapor HF:

  • For 9 µm : 15 min (0,6 µm / min)
  • For 120 µm : 80 min (ou 1,5 µm / min)
Tool name:
Sorbonne HF
Area/room:
SB2 - Chimie 2 (Electroformage)
Category:
Chemistry
Manufacturer:
XXX
Model:
XXX
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hours
Max booking time, night:
hours
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