Picture of Sorbonne KOH 1 ( Process standard)
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Wet bench used for silicon etching :

We use a KOH solution with a mass concentration of 41% (10M)

Etching rate at 55°C :  0.25 µm/min (Si (100))

 

To know etching rate for different temperature, you can use this website :

http://www.lelandstanfordjunior.com/KOH.html

Silicon 100 etches anisotropically, with a 54.74° angle from the plane. Masked silicon will etch as shown in the diagram.

source : http://cleanroom.byu.edu/KOH

Tool name:
Sorbonne KOH 1 ( Process standard)
Area/room:
SB2 - Chimie 2 (Electroformage)
Category:
Chemistry
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