TECHNICAL SPECIFICATIONS

APPLICATIONS

FEATURES

Surface activation in cold plasma (low temperature, ambient conditions), based on dielectric barrier discharge

Very fast process (<<1min)

Different plasma gases and different substrates

• Surface activation for low-temp. bonding applications
• Pre-treatment of wafers for fusion bonding (higher bonding strength and lower post-bonding annealing temperature <450^oC)
• Low-temperature post-processing of sensitive MEMS/MOEMS wafers

PLASMA

Oxygen, nitrogen, argon

Power: max. 500W (typ. 200W for Si wafer)

Programmable number of passage (typ. 4)

WAFERS

Silicon, Glass, Quartz, LiNbO₃ etc. also with thin-film dielectric layers 

Wafers with metallic layers NOT ALLOWED

Size range: 10mm up to Ø=300mm

Thickness: typical 0.5mm, 1.0mm

Other thicknesses (up to several mm) possible but require adjustment

CHUCK

Vacuum fixation of substrate

No need of hardware conversion for different wafer sizes