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TECHNICAL SPECIFICATIONS

APPLICATIONS

FEATURES

Surface activation in cold plasma (low temperature, ambient conditions), based on dielectric barrier discharge

Very fast process (<<1min)

Different plasma gases and different substrates

  • Surface activation for low-temp. bonding applications
  • Pre-treatment of wafers for fusion bonding (higher bonding strength and lower post-bonding annealing temperature <450oC)
  • Low-temperature post-processing of sensitive MEMS/MOEMS wafers

PLASMA

Oxygen, nitrogen, argon

Power: max. 500W (typ. 200W for Si wafer)

Programmable number of passage (typ. 4)

WAFERS

Silicon, Glass, Quartz, LiNbO3 etc. also with thin-film dielectric layers 

Wafers with metallic layers NOT ALLOWED

Size range: 10mm up to Ø=300mm

Thickness: typical 0.5mm, 1.0mm

Other thicknesses (up to several mm) possible but require adjustment

CHUCK

Vacuum fixation of substrate

No need of hardware conversion for different wafer sizes

Tool name:
Surface activation NP12
Area/room:
SB2 - Wafer Bonding
Category:
Packaging
Manufacturer:
Suss Microtec
Model:
NP12
Max booking time, day:
8 hours
Max booking time, night:
0 hours
No. of future bookings:

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