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TECHNICAL SPECIFICATIONS

APPLICATIONS

FEATURES

Dedicated for CLEAN processes

Big separation between wafers (up to 10mm)

In-situ wafer alignment: Visible/IR (±5/20mm)

Control of atmosphere with inert gas (He, Ne)

Special bonding processes by different methods (anodic, eutectic, thermo-compression, direct)

Chamber

Vacuum down to 1E-6 mbar

Nitrogen purge gas, Process gases: He, Ne

Wafers

Size of 3" and 4" (Si, SOI, Glass, LiNbO3, Quartz)

Max. thickness of wafer stack: 8 mm ±0.5mm

Min. thickness of top wafer: 0.4 mm

Heating

Top: Halogen lamps (max. 560oC)

Bottom: Resistance heater (max. 560oC)

Fast or controlled heating

Voltage

Max. bonding voltage/current: 2.5kV / 40mA

Constant voltage or constant current operation

Contact Force

Top Graphite Tool: max. 500N (anodic bonding)

Top Molybdenum Tool: max. 2.5kN (1E-5mbar)

Cooling

Natural or controlled cooling

Tool name:
Wafer bonder AML402P
Area/room:
SB2 - Wafer Bonding
Category:
Packaging
Manufacturer:
Applied Microengineering Ltd.
Model:
402P
Max booking time, day:
hours
Max booking time, night:
hours
No. of future bookings:

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