TECHNICAL SPECIFICATIONS
APPLICATIONS
FEATURES
Dedicated for CLEAN processes
Big separation between wafers (up to 10mm)
In-situ wafer alignment: Visible/IR (±5/20mm)
Control of atmosphere with inert gas (He, Ne)
Special bonding processes by different methods (anodic, eutectic, thermo-compression, direct)
Chamber
Vacuum down to 1E-6 mbar
Nitrogen purge gas, Process gases: He, Ne
Wafers
Size of 3" and 4" (Si, SOI, Glass, LiNbO3, Quartz)
Max. thickness of wafer stack: 8 mm ±0.5mm
Min. thickness of top wafer: 0.4 mm
Heating
Top: Halogen lamps (max. 560oC)
Bottom: Resistance heater (max. 560oC)
Fast or controlled heating
Voltage
Max. bonding voltage/current: 2.5kV / 40mA
Constant voltage or constant current operation
Contact Force
Top Graphite Tool: max. 500N (anodic bonding)
Top Molybdenum Tool: max. 2.5kN (1E-5mbar)
Cooling
Natural or controlled cooling