Picture of Wafer bonder EVG501
Current status:
AVAILABLE
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TECHNICAL SPECIFICATIONS

APPLICATIONS

FEATURES

Automatic or manual operation modes

Separation between wafers set by 3 FLAGS (thickness 50µm or 200µm)

Alignment of wafers possible in EVG601 (±5mm)

Special bonding processes by different methods (Anodic, Eutectic, Adhesive, Thermo-compression, Direct)

Gas

Vacuum down to 1E-4 mbar (turbo pump)

Nitrogen purge gas

Wafers

Size of 3" (Ø=77mm) and 4" (Ø=100mm) 

Silicon, SOI, Glass, LiNbO3, Quartz

Max. thickness of wafer stack: 6 mm

Bonding of structures possible

Heating

Top: Resistance heater (max. 550oC)

Bottom: Halogen lamps (max. 550oC)

Voltage

Max. bonding voltage/current: 2kV / 50mA

Force

Quartz Tool: max. 2kN (anodic bonding)

Stainless steel Tool: max. 4kN

Cooling

Natural or ramp cooling

Tool name:
Wafer bonder EVG501
Area/room:
SB2 - Wafer Bonding
Category:
Packaging
Manufacturer:
EVG
Model:
501
Max booking time, day:
hours
Max booking time, night:
hours
No. of future bookings:

Instructors

Licensed Users

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