TECHNICAL SPECIFICATIONS
APPLICATIONS
FEATURES
Automatic or manual operation modes
Separation between wafers set by 3 FLAGS (thickness 50µm or 200µm)
Alignment of wafers possible in EVG601 (±5mm)
Special bonding processes by different methods (Anodic, Eutectic, Adhesive, Thermo-compression, Direct)
Gas
Vacuum down to 1E-4 mbar (turbo pump)
Nitrogen purge gas
Wafers
Size of 3" (Ø=77mm) and 4" (Ø=100mm)
Silicon, SOI, Glass, LiNbO3, Quartz
Max. thickness of wafer stack: 6 mm
Bonding of structures possible
Heating
Top: Resistance heater (max. 550oC)
Bottom: Halogen lamps (max. 550oC)
Voltage
Max. bonding voltage/current: 2kV / 50mA
Force
Quartz Tool: max. 2kN (anodic bonding)
Stainless steel Tool: max. 4kN
Cooling
Natural or ramp cooling