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TECHNICAL SPECIFICATIONS

APPLICATIONS

FEATURES

CCP source: 300W

Clamping chuck: Electrostatic

Gas : SF6, C2F6, O2, CHF3

Mask: PR, SiO2, Metallic masks are allowed

Nano-metric & submicronic etching on variety of materials (dielectrics, SC, piezo-electric,…)

WAFERS

4 inch, samples can be glued on 4’’ Glass carrier wafer

End point detection

OES system can be used

Tool name:
RIE-F-Plassys
Area/room:
SB2 - Gravure
Category:
Plasma etching
Manufacturer:
Plassys
Model:
XXX
Max booking time, day:
8 hours
Max booking time, night:
0 hours
No. of future bookings:

Instructors

Licensed Users

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