TECHNICAL SPECIFICATIONS
APPLICATIONS
FEATURES
CCP source: 300W
Clamping chuck: Electrostatic
Gas : SF6, C2F6, O2, CHF3
Mask: PR, SiO2, Metallic masks are allowed
Nano-metric & submicronic etching on variety of materials (dielectrics, SC, piezo-electric,…)
WAFERS
4 inch, samples can be glued on 4’’ Glass carrier wafer
End point detection
OES system can be used