TECHNICAL SPECIFICATIONS

APPLICATIONS

FEATURES

ICP source: 600W

Clamping chuck: No

Temperature Process for both chamber & substrate: 60° to 180°

Gas :O2, Ar, SF6, CF4

Mask: PR, SiO2, Metallic masks are allowed

• PR stripping
• Surface treatment/

WAFERS

4 inch, samples can be glued on 4’’ Glass carrier wafer

End point detection

OES system can be used