Picture of RIE-O2-Nanoplas
Current status:
AVAILABLE
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TECHNICAL SPECIFICATIONS

APPLICATIONS

FEATURES

ICP source: 600W

Clamping chuck: No

Temperature Process for both chamber & substrate: 60° to 180°

Gas :O2, Ar, SF6, CF4

Mask: PR, SiO2, Metallic masks are allowed

  • PR stripping
  • Surface treatment/

 

WAFERS

4 inch, samples can be glued on 4’’ Glass carrier wafer

End point detection

OES system can be used

Tool name:
RIE-O2-Nanoplas
Area/room:
SB2 - Gravure
Category:
Plasma etching
Manufacturer:
Nanoplas
Model:
DSB 6000
Max booking time, day:
8 hours
Max booking time, night:
0 hours
No. of future bookings:

Instructors

Licensed Users

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