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TECHNICAL SPECIFICATIONS

APPLICATIONS

FEATURES

ICP power source: 3KW

Bias power source: 1.5KW

Process temperature: -20 to 40°

Clamping chuck: Mechanical

Gas: SF6, C4F8, O2, Ar, CF4, He

Mask: PR, SiO2, Metallic masks are allowed

  • Dielectric materials etching
  • Isolated materials etching
  • Piezo-electric materials etching

 

WAFERS

4 inch, samples can be glued on 4’’ carrier wafer

End point detection

OES system can be used

Tool name:
DRIE STS
Area/room:
SB2 - Gravure
Category:
Plasma etching
Manufacturer:
STS
Model:
APS
Max booking time, day:
8 hours
Max booking time, night:
0 hours
No. of future bookings:

Instructors

Licensed Users

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