TECHNICAL SPECIFICATIONS
APPLICATIONS
FEATURES
ICP power source: 3KW
Bias power source: 1.5KW
Process temperature: -20 to 40°
Clamping chuck: Mechanical
Gas: SF6, C4F8, O2, Ar, CF4, He
Mask: PR, SiO2, Metallic masks are allowed
WAFERS
4 inch, samples can be glued on 4’’ carrier wafer
End point detection
OES system can be used