TECHNICAL SPECIFICATIONS

APPLICATIONS

FEATURES

ICP power source: 2 KW

Bias power source: 0.5 KW

Process temperature: -20 to 30°

Clamping chuck: Mechanical

Gas: SF6, C4F8, O2

Mask: PR, SiO2, Metallic masks are allowed

• Si deep etching for MEMS, MOEMS … applications
• Si isotropic etching

WAFERS

4 inch, samples can be glued on 4’’ carrier wafer

End point detection

OES system can be used