TECHNICAL SPECIFICATIONS

APPLICATIONS

FEATURES

ICP power source: 5.5 KW

Bias power source: 1.5 KW

Dual source

Process temperature: 0 to 40°

Clamping chuck: Electrostatic

Gas:SF6, C4F8, O2, Ar, N2, He

Mask: PR, SiO2

• Si deep etching for MEMS, MOEMS … applications
• Si Sub-Micronic etching
• Si isotropic etching
• Vias etching

WAFERS

6 inch, samples can be glued on 4’’ carrier wafer

End point detection

CLARITAS OES system integrated