Picture of DRIE 6 pouces
Current status:
AVAILABLE
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TECHNICAL SPECIFICATIONS

APPLICATIONS

FEATURES

ICP power source: 5.5 KW

Bias power source: 1.5 KW

Dual source

Process temperature: 0 to 40°

Clamping chuck: Electrostatic

Gas:SF6, C4F8, O2, Ar, N2, He

Mask: PR, SiO2

  • Si deep etching for MEMS, MOEMS … applications
  • Si Sub-Micronic etching
  • Si isotropic etching
  • Vias etching

 

WAFERS

6 inch, samples can be glued on 4’’ carrier wafer

End point detection

CLARITAS OES system integrated

Tool name:
DRIE 6 pouces
Area/room:
SB2 - Gravure
Category:
Plasma etching
Manufacturer:
SPTS
Model:
Rapier Omega C2L
Max booking time, day:
hours
Max booking time, night:
hours
No. of future bookings:

Instructors

Licensed Users

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