TECHNICAL SPECIFICATIONS

APPLICATIONS

FEATURES

ICP power source: 0.6 KW

Bias power source: 0.6 KW

Process temperature: 0 to 45°

Clamping chuck: Electrostatic

Gas: Cl2, NH3, HBr, O2, N2, Ar, CF4

Mask: PR, SiO2, Metallic masks are allowed

• Metallic materials etching
• SC materials etching

WAFERS

4 inch, samples can be glued on 4’’ Glass carrier wafer

End point detection

OES system can be used