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TECHNICAL SPECIFICATIONS

APPLICATIONS

FEATURES

ICP power source: 0.6 KW

Bias power source: 0.6 KW

Process temperature: 0 to 45°

Clamping chuck: Electrostatic

Gas: Cl2, NH3, HBr, O2, N2, Ar, CF4

Mask: PR, SiO2, Metallic masks are allowed

  • Metallic materials etching
  • SC materials etching

WAFERS

4 inch, samples can be glued on 4’’ Glass carrier wafer

End point detection

OES system can be used

Tool name:
DRIE-Cl-Omega
Area/room:
SB2 - Gravure
Category:
Plasma etching
Manufacturer:
Trikon
Model:
Omega 201
Max booking time, day:
hours
Max booking time, night:
hours
No. of future bookings:

Instructors

Licensed Users

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