TECHNICAL SPECIFICATIONS

APPLICATIONS

FEATURES

Measurement of the wafer curvature before and after film deposition

Stress range: 1 x 10⁷ to 4 x 10¹⁰ dynes/cm²

Wafer sizes: 200mm or smaller

Laser: Dual wavelength (780nm, 650nm) diodes

Repeatability: 1.5 % (1σ) of average

Stress measurement of deposited thin films, Thermal expansion coefficients, Wafer bow height

SCAN AND MAPPING

Scan range: Up to 170mm

Scan line: Single scan line at any wafer orientation

Mapping: Multi scan line mapping by manually rotating wafers.

Max of 6 line mapping with 30° between each line

HEATING

Maximal temperature: 450°C

Heating and cooling ramps: max  6^oC/min