TECHNICAL SPECIFICATIONS :

Substrate size : 4” & 6” circular wafers

Substrate thickness : from 200 µm to 1000 µm

Accuracy : 0.2 µm (3 s)

Measurement : Automatic measurement for multi points

Repeatability : 0.1 µm

Others : Tool induced shift compensation by wafer and pattern 180° rotation

                IR Metrology

Graphical User Interface : Including graphical display of results and ASCii output files (.CSV)

APPLICATIONS :

• Top and bottom side alignment control
• Top and top side alignment control
• Top and infra-red alignment control for bonded wafers
• Infra-red and infra-red alignment control for bonded wafers