TECHNICAL SPECIFICATIONS :  

CCP source: 600W

Clamping chuck: Mechanic

Gas : SF6, C2F6, O2, CHF3, Ar

Mask: PR, SiO2, Metallic masks are allowed

Quartz and graphite shuttles (compatible 75, 100, 150 mm wafers)

Liner SP20 for protection of reactor from non-volatile byproducts

WAFERS  : 4 inch, samples can be glued on 3’’ or 4” carrier wafer

End point detection : EPD Interferometry HORIBA Jobin-Yvon (wavelength 673,7 nm, spot size 20µm)

APPLICATIONS  :

Nano-metric & submicronic etching on variety of materials (dielectrics, SC, piezo-electric,…)