• Bonding processes by various methods (anodic, direct, eutectic, adhesive, thermocompression)
• Low-temperature direct bonding of dissimilar materials (e.g. Si-Si, Si-SiO2) by use of in-situ plasma activation (radicals only, no energetic ions)
• Thermocompressive Cu-Cu bonding at low temperature due to in-situ oxide chemical etching
• Aligned UV cure bonding with thick polymer layers by in-situ UV exposure
• Encapsulation in vacuum or in well controlled atmosphere of gases
• Alignment of wafers at bonding temp. in vacuum with no flags
• Bonding of very thick wafer stacks (up to 30mm)
• Advanced bonded substrates (SOI, SOG)
• If you want to request a bonding service:
  • please use the following link to download and complete a technical form that will be analyzed in order to propose you the best bonding solution
  • https://cloud.femto-st.fr/nextcloud/index.php/s/4Y84Yii3cCknHiH

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TECHNICAL SPECIFICATIONS :

1. ACCESS: SELF-SERVICE MACHINE AFTER TRAINING

2. FEATURES:

Flexible automatic multi-process system.

Unique side-clamping of top wafer (no flags).

In-situ wafer alignment, surface treatment (plasma, vapors) and UV exposure.

Big separation between platens (up to 30mm).

Control of atmosphere with 3 process gases.

BONDING ENVIRONMENT:

Vacuum: min. 1E-6 mbar

Process gas: N2, O2, Ar (from 2.5E-3 mbar to 1 bar gauge (or 2 bar absolute))

Vapor: DI water (formic acid compatible)

SUBSTRAT :

Wafers: 3”, 4”, 6” (bonding with accurate align.)    

Chips: 10x10mm² , 10x26mm², 20x26mm² (bonding with mech. align)

Min. thickness of top wafer: 0.2 mm

Min. thickness of bottom wafer: no restriction but no wafer retainer for <0.35mm

Max. thickness of wafer stack: 30mm

VOLTAGE:

Max. bonding voltage/current: 2.5kV / 40mA

Constant voltage or constant current operation

HEATING:

Heat source: Halogen lamps, max. rate ~1.6^oC/s

Top/Bottom temperature: max. 560^oC, 1^oC step

HT limit under vacuum: if T>500^oC only if t<4h

HT limit under N2: Tmax=380^oC 

Temp. variation across platen:

• 4” wafers: DT=4^oC at 400^oC
• 6” wafers: DT=7^oC at 400^oC

COOLING:

Cooling: natural or forced by N2 flow (≤200^oC)

Cooling rates for 4” wafers:

•         0.9^oC/s at 400^oC    
•         0.65^oC/s at 300^oC
•         0.35^oC/s at 200^oC

OPTICAL ALIGN. :

Alignment accuracy ±1-5µm (bond type, wafers)

Spring Pin Assembly must be used for ≤ ±2.5µm (applicable for wafers 0.2-1.5mm thick)

- Standard CMOS cams VIS/IR (1.2µm) with FOV 1.53x1.23mm², resolution 1µm

- NIR InGaAs (1.2-1.7µm) cameras, resolution 5µm, to see through heavily doped wafers or normally doped wafers at high temp.

BONDING FORCE:

Hydraulic load cell 0-40kN, resolution ±5N,

Accuracy combined error: <0.25% of readout + zero offset ±100N

Automatic force control (e.g. fixed force process)

Top Tungsten Platen: max. 45kN

Top Graphite Platen: max. 1kN (anodic bond.)

RAD ACTIVATION:

In-situ radical activation of surface for direct bonding at lower temperature

UV EXPOSURE:

In-situ UV exposure (365nm, 4W/cm2) of UV-sensible polymers. Require quartz bottom platen.