TECHNICAL SPECIFICATIONS
APPLICATIONS
Features
Substrate & Wafers can be processed
Max size: 200 mm / 40 mm thickness
Max measurement range: 10 mm
X & Y resolution: 50 nm
Bow & Warp precision: +/- 0.2 µm Bow & Warp resolution: 40 nm
TTV & Thickness precision: 1889 µm thick sample: 1.75 µm 200 µm thick sample: 175 nm
TTV & Thickness resolution: 1889 µm thick sample: 175 nm 200 µm thick sample: 17,5 nm
Acquisition speed: 4000 pts/sec
SCAN CT software - Various filters and measurements
Surface measurement
Thickness measurement
Optical profilometry
Optics
Infrared interferometer
Confocal white light sensor
Holding
Holding pins (no vaacum)
Processed materials
Si, Glass, Quartz, LiNbO3, LiTaO3, Sapphire.