TECHNICAL SPECIFICATIONS

APPLICATIONS

Features

Substrate & Wafers can be processed

Max size: 200 mm / 40 mm thickness

Max measurement range: 10 mm

X & Y resolution: 50 nm

Bow & Warp precision: +/- 0.2 µm
Bow & Warp resolution: 40 nm

TTV & Thickness precision:
1889 µm thick sample: 1.75 µm
200 µm thick sample: 175 nm

TTV & Thickness resolution:
1889 µm thick sample: 175 nm
200 µm thick sample: 17,5 nm

Acquisition speed: 4000 pts/sec

SCAN CT software - Various filters and measurements

Surface measurement

Thickness measurement

Optical profilometry

Optics

Infrared interferometer

Confocal white light sensor

Holding

Holding pins (no vaacum)

Processed materials

Si, Glass, Quartz, LiNbO3, LiTaO3, Sapphire.